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| Elektronische Bauelemente PNP Transistors Plastic-Encapsulate Transistors RoHS Compliant Product BCX51 1 2 3 4.4~4.6 1.4~1.8 SOT-89 1.BASE 2.COLLECTOR 1.4~1.6 Features Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 0.5 -1 -45 3.EMITTER 3.94~4.25 W (Tamb=25 C) A V o 0.36~0.56 0.9~1.1 1.5Ref. 2.9~3.1 0.32~0.52 2.3~2.6 0.35~0.44 Dimensision in Millimeter Operating and storage junction temperature range TJ, Tstg: -55 oC to +150 C ELECTRICAL CHARACTERISTICS (Tamb=25 oC Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current o unless Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO otherwise Test specified) MIN -45 -45 -5 -0.1 -0.1 MAX UNIT V V V A A conditions Ic=-100A, IE=0 IC= -1mA , IB=0 IE=-10A, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 DC current gain BCX51 BCX51-10 BCX51-16 hFE(1) VCE=-2V, IC=-150mA 63 63 100 63 40 250 160 250 hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(ON) VCE=-2V, IC=- 5mA VCE=-2V, IC=- 500mA IC=-500 mA, IB= -50mA IC= -500 mA, VCE=-2V VCE= -5V, IC=-10mA -0.5 -1 V V Transition frequency fT f = 100MHz 50 MHz DEVICE MARKING BCX51=AA BCX51-10=AC BCX51-16=AD http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 1 |
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